unisonic technologies co., ltd n5027 npn silicon transistor www.unisonic.com.tw 1of 4 copyright ? 2005 unisonic technologies co., ltd qw-r203-032,a high voltage and high reliability npn transistor features * high voltage (v ceo = 800v) * high speed switching * wide soa to-220 1 1 to-220f *pb-free plating product number: n5027l ordering information order number pin assignment normal lead free plating package 1 2 3 packing N5027-X-TA3-T n5027l-x-ta3-t to-220 b c e tube n5027-x-tf3-t n5027l-x-tf3-t to-220f b c e tube n5027l-x-ta 3-t (1)packing type (2)package type (4)lead plating (1) t: tube (2) ta3: to-220, tf3: to-220f (4) l: lead free plating, blank: pb/sn (3) x: refer to classificationof h fe1 (3)rank
n5027 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r203-032,a absolute maximum ratings (tc = 25
) parameter symbol ratings unit collector-base voltage v cbo 850 v collector-emitter voltage v ceo 800 v collector-emitter voltage v ebo 7 v peak collector current i c 3 a collector current (pulse) i cp 10 a base current i b 1.5 a peak collector consume dissipation p c 50 w peak junction temperature t j 150
storage temperature t stg -55 ~ +150
note absolute maximum ratings are those val ues beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device operat ion is not implied. electrical characteristics (t c = 25
, unless otherwise specified.) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =1ma, i e =0 850 v collector-emitter breakdown voltage bv ceo i c =5ma, i b =0 800 v emitter-base breakdown voltage bv ebo i e =1ma, i c =0 7 v collector-emitter sustaining voltage v cex(sus) i c =1.5a, i b1 = -i b2 =0.3a l=2mh, clamped 800 v collector cut-off current i cbo v cb =800v, i e =0 10 ? " emitter cut-off current i ebo v eb =5v, i c =0 10 ? " h fe 1 v ce =5v, i c =0.2a 10 40 dc current gain h fe 2 v ce =5v, i c =1a 6 collector-emitter saturation voltage v ce (sat) i c =1a, i b =0.3a 1.1 v base-emitter saturation voltage v be (sat) i c =1.5a, i b =0.3a 1.5 v output capacitance cob v cb =10v, f=1mhz, i e =0 60 pf current gain bandwidth product f t v ce =10v, i c =0.2a 15 mhz turn on time t on 0.5 ? s storage time t stg 3 ? s fall time t f v cc =400v i c =5i b1 = -2.5i b2 =2a r l =200 ? 0.3 ? s classification of h fe1 rank n r o range 10 ~ 20 15 ~ 30 20 ~ 40
n5027 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r203-032,a typical characteristics 4.0 3.6 0.0 0 static characteristic collector current vs. collector-emitter voltage 12345678910 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 i b = 150 m a i b = 100 m a i b =50 m a i b =10 m a 1ms 100us 1000 100 10 1 0.01 0.1 1 10 dc current gain vs. collector current v ce =5v saturation voltage vs. collector current collector current vs. base-emitter voltage dc current gain, h fe collector-emitter voltage, v ce (v ) c o l l e c t o r c u r r e n t , i c ( a ) collector current, i c (a) base-emitter voltage, v be (v) collector current, ic (a) collector current, i c (a) s a t u r a t i o n v o l t a g e , v c e ( s a t ) ( v ) 1ms 100us 10 1 0.1 0. 01 0.01 0.1 1 10 4.0 3.5 1.0 0.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 3.0 2.5 2.0 1.5 0.0 v ce =5v ic=5i b 1ms 10 1 0.1 0.01 0.1 110 1e-s 1 10 100 1000 10000 100 10 1 0.1 0.01 icmax .(continuous ) 1 0 m s vcc=400 v 5.i b 1= - 2 .5.i b 2=ic collector-emitter voltage, v ce (v ) t i m e , t o n , t s t g , t f ? s ) collector-emitter voltage, v ce (v ) collector current, ic (a) 1 0 0 ? s switching time time vs. collector-emitter voltage safe operating area collector current vs. collector-emitter voltage icmax.(pulse ) dc 1 m s
n5027 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r203-032,a typical characteristics(cont.) 1ms 100us 1 100 10 10 100 1000 10000 0.1 0.01 80 70 20 10 0 25 50 75 100 125 150 60 50 40 30 0 175 collector current, ic (a) collector-emitter voltage, v ce (v) power derating power dissipation vs. case temperature case temperature, t c (
) power dissipation, pc (w) reverse operating area collector current vs. collector-emitter voltage i b 2= -0 .3a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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